The principal
area of research in the Semiconductor physics
Laboratory is the study of defects in crystalline
semiconductors. The crystalline semiconductors
under study in the laboratory include both
elemental semiconductors such as Si, SiC
and III-V compounds such as GaP, Ga(In,As)P
and GaN. The experimental techniques used
for characterization of defects include
Junction space-charge techniques such as
Deep Level Transient Spectroscopy (DLTS),
Optical-DLTS and Photo capacitance. A number
of deep-level defect traps have been studied
in detail and results reported in international
journals and conferences.
FUTURE INTERESTS
New techniques of semiconductor material
preparation such as MOCVD and MBE growth
of semiconductors. Admittance spectroscopy,
High resolution DLTS system and X-ray Diffraction.
FOREIGN LINKAGE
Paul Drude Institute for Solid State Physics,
Berlin, Germany.
Ferdenand Brown Institute, Berlin, Germany.
LEPES-CNRS, Grenoble France.
Linkoping University, Sweden.
University of Chalmer, Sweden
UNC-Charlotte, North Carolina, USA
LOCAL COLLABORATION
Semiconductor Physics Laboratory, Quaid-e-Azam
University, Islamabad.
Head of the Lab
Prof. Dr. Asghar Hashmi
Ph.D Students
Ijaz Hussain Asghar
Miss Hadia Noor
Mr. Faisal Iqbal
Mr. Adnan Ali
Mr. Imran Arshad
M.Phil Students
Maj. Tahir ul Islam
Iftekhar Lodhi
Khalid Mehmood
Hafiz Naeem ur Rehman
Ejaz un Nabi
Saif ullah
Zahida Batool
Samiya Balouch
Muhammad Hussain
Muhammad Mansoor
Muahammad Khaleel
Amjad Mehmood
M.Sc Students
Bushara Khakwani
Muahammad Asad
Muhammad Imran
Muhammad Younus
